Damage Assessment in Low Doses30Si+-Implanted GaAs
نویسندگان
چکیده
منابع مشابه
DIFFUSION OF SILICON IN ION IMPLANTED GaAs
Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
متن کاملExtended defects of ion-implanted GaAs
Ion-implantation-induced extended defect formation and annealing processes have been studied in GaAs. Mg, Be, Si, Ge, and Sn ions were implanted between 40 and 185 keV over the dose range of 1 X 10t3-1 X 1015/cm2. Furnace annealing after capping with S&N4 was performed between 700 and 900 “C for times between 5 min and 10 h. Plan-view and crosssectional transmission electron microscopy results ...
متن کاملPrecipitation in Fe- or Ni-implanted and annealed GaAs
We report the formation of metal/semiconductor composites by ion implantation of Fe and Ni into GaAs and a subsequent anneal to nucleate clusters. Electron diffraction experiments and high resolution transmission electron microscopy images indicate that these precipitates are probably hexagonal and metallic Fe3GaAs or Ni3GaAs with orientation relationship to GaAs of ~101̄0!ppi~422̄!m , ~0002!ppi~...
متن کاملEL2-related studies in irradiated and implanted GaAs
2014 The midgap donor level EL2 is a very important defect because of the role it plays in the compensation of undoped semi-insulating GaAs. The knowledge of the exact EL2 structure becomes of even greater prime importance. We present here a review of the experimental results concerning artificial EL2 creation by electron and neutron irradiation and also ion implantation followed or not by anne...
متن کامل0.10 μm Ion-Implanted GaAs MESFETs with Low Cost Production Process
We have successfully fabricated 0.1 μm gate GaAs MESFETs using a low cost process. The result was obtained from optical lithography, resist etching, and ion-implantation technologies based on Single Resist layer Dummy gate (SRD) process. The novel feature of the SRD process is forming a sub-quarter micron gate with conventional optical lithography. We have obtained a 0.18 μm gate using this pro...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2009
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.116.42